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SSM5G01TU
Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Planar Diode
SSM5G01TU
DC-DC Converter for DSCs and Camcorders
* * Co-packaged Pch MOSFET and Schottky Diode. Low RDS (ON) and Low VF Unit: mm
Maximum Ratings (Ta = 25C)
Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) t = 10s Tch Rating -30 20 -1.0 -2.0 0.5 0.8 150 Unit V V A
Channel temperature Channel temperature
W C UFV
JEDEC
2-2R1A
Maximum Ratings (Ta = 25C) SCHOTTKY DIODE
Characteristics Maximum (peak) reverse voltage Reverse voltage Average forward current Peak one cycle surge forward current (non-repetitive) Junction temperature Symbol VRM VR IO IFSM Tj Rating 25 20 0.5 2 (50 Hz) 125 Unit V V A A C
JEITA TOSHIBA
Weight: 7 mg (typ.)
Maximum Ratings (Ta = 25C) MOSFET, DIODE COMMON
Characteristics Storage temperature Operating temperature Symbol Tstg Topr (Note 3) Rating -55~125 -40~100 Unit C C
Note 1: Mounted on FR4 board 2 (25.4 mm 25.4 mm 1.6 t, Cu pad: 645 mm ) Note 2: The pulse width limited by max channel temperature. Note 3: Operating temperature limited by max channel temperature and max junction temperature.
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SSM5G01TU
Marking
5 4
Equivalent Circuit
5 4
KEA
1
2
3
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the board material, board area, board thickness and pad area are also affected by the environment in which the product is used. When using this device, please take heat dissipation fully into account.
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MOSFET Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain-Source breakdown voltage Drain Cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS V (BR) DSX IDSS Vth |Yfs| RDS (ON) Ciss Crss Coss ton toff Test Condition VGS = 16 V, VDS = 0 ID = -1 mA, VGS = 0 ID = -1 mA, VGS = 20 V VDS = -30 V, VGS = 0 VDS = -5 V, ID = -0.1 mA VDS = -5 V, ID = -0.5 A ID = -0.5 A, VGS = -10 V ID = -0.5 A, VGS = -4 V (Note 4) (Note 4) (Note 4) Min 3/4 -30 -15 3/4 -0.8 0.5 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 1.0 0.3 0.6 86 14 25 14 8.5 Max 1 3/4 3/4 -1 -1.8 3/4 0.4 0.8 3/4 3/4 3/4 3/4 3/4 Unit mA V mA V S W pF pF pF ns
VDS = -15 V, VGS = 0, f = 1 MHz VDS = -15 V, VGS = 0, f = 1 MHz VDS = -15 V, VGS = 0, f = 1 MHz VDD = -15 V, ID = -0.5 A VGS = 0~-4 V, RG = 10 W
Note 4: Pulse measurement
Switching Time Test Circuit
(a) Test circuit
0 -4 V 10 ms VDD OUT VDD = -15 V RG = 10 W Duty < 1% = VIN: tr, tf < 5 ns Common source Ta = 25C
(b) VIN
0V
10% 90%
IN RG
-4 V VDS (ON) 90% 10% tr ton
(c) VOUT
VDD
tf toff
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = -100 mA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on)) Please take this into consideration for using the device. VGS recommended voltage of -2.5 V or higher to turn on this product.
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Schottky Diode Electrical Characteristics (Ta = 25C)
Characteristic Forward voltage Reverse current Total capacitance Symbol VF (1) VF (2) IR CT IF = 0.3 A IF = 0.5 A VR = 20 V VR = 0 V, f = 1 MHz Test Condition Min Typ. 0.38 0.43 3/4 46 Max 0.45 3/4 50 3/4 Unit V V mA pF
3/4 3/4
3/4 3/4
Precaution
The schottky barrier diode of this product are having large-reverse-current-leakage characteristic compare to the other switching diodes. This current leakage and not proper operating temperature or voltage may cause thermal runaway. Please take forward and reverse loss into consideration when you design.
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SSM5G01TU
ID - VDS (MOSFET)
-2 -10 -4.5 -4.0 Common Source Ta = 25C -10000
ID - VGS (MOSFET)
Common Source VDS = -5 V
-1000
(mA)
(A)
-1.5
ID
Drain current
Drain current
-1 -3.0 -0.5 VGS = -2.5 V
ID
-3.5
-100
Ta = 100C
-25C
-10
25C
-1
-0.1
0 0
-0.5
-1
-1.5
-2
-0.01 0
-1
-2
-3
-4
-5
Drain-Source voltage VDS
(V)
Gate-Source voltage
VGS
(V)
RDS (ON) - ID (MOSFET)
1 Common Source Ta = 25C 0.8 VGS = -4 V 1.6 2
RDS (ON) - VGS (MOSFET)
Common Source ID = -0.5 A
Drain-Source on resistance RDS (ON) (W)
0.6
Drain-Source on resistance RDS (ON) (W)
1.2
0.4
-10 V
0.8 Ta = 100C 0.4 -25C
0.2
25C
0 0
-0.5
-1.0
-1.5
-2.0
0 0
-5
-10
-15
-20
Drain current
ID
(A)
Gate-Source voltage
VGS
(V)
RDS (ON) - Ta (MOSFET)
1.2 Common Source ID = -0.5 A -3
Vth - Ta (MOSFET)
Common Source VDS = -5 V ID = -0.1 mA
(V)
VGS = -4.0 V
1
-2.5
Drain-Source on resistance RDS (ON) (W)
Gate threshold voltage Vth
100 125 150
0.8
-2
0.6 -10 V 0.4
-1.5
-1
0.2
-0.5
0 -25
0
25
50
75
0 -25
0
25
50
75
100
125
150
Ambient temperature Ta (C)
Ambient temperature Ta (C)
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SSM5G01TU
|Yfs| - ID (MOSFET)
3 500 300 1 0.3 0.1
C - VDS (MOSFET)
iYfsi
(S)
(pF)
100 50 30
Forward transfer admittance
Ciss
Capacitance C
Coss 10 5 Common Source 3 Ta = 25C f = 1 MHz VGS = 0 V 1 -0.1 -1 Crss
0.01 Common Source 0.03 0.001 -1 VDS = -5 V Ta = 25C -10 -100 -1000 -10000
-10
-100
Drain current
ID
(mA)
Drain-Source voltage VDS
(V)
Dynamic input characteristic (MOSFET)
-10 300 Common Source ID = -1 A Ta = 25C
t - ID (MOSFET)
Common Source VDD = -15 V VGS = 0~ -4 V Ta = 25C RG = 10 W toff 30 tf
(V)
VGS
-12 V -6 VDD = -24 V -4
Gate-Source voltage
Switching time
t
(ns)
-8
100
10
ton tr
-2 3 -0.01 0 0 1 2 3
-0.03
-0.1
-0.3
-1
-3
Drain current
ID
(A)
Total gate charge Qg
(nC)
IDR - VDS (MOSFET)
-2 Common Source VGS = 0 -1.6 Ta = 25C
(A)
D IDR S
Drain reverse current IDR
G
-1.2
-0.8
-0.4
0 0
0.2
0.4
0.6
0.8
1
Drain-Source voltage VDS
(V)
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rth - tw (MOSFET)
1000
rth (C /W)
Single pulse Mounted on FR4 board 2 (25.4 mm 25.4 mm 1.6 t, Cu Pad: 645 mm )
Transient thermal impedance
100
10
1 0.001
0.01
0.1
1
10
100
1000
Pulse width
tw
(s)
Safe operating area (MOSFET)
-3 ID max (pulsed) 1 ms* 1.2
PD - Ta (MOSFET)
Mounted on FR4 board
(W)
1 t = 10 s 0.8
(25.4 mm 25.4 mm 1.6 t, Cu Pad: 645 mm2
(A)
-1
Drain power dissipation
Drain current
ID
PD
ID max (continuous)
10 ms*
-0.3
DC operation Ta = 25C
10 s*
0.6 DC 0.4
-0.1 Mounted on FR4 board (25.4 mm 25.4 mm 1.6 t, Cu Pad: 645 mm2) -0.03 *: Single nonrepetitive pulse Ta = 25C Curves must be derated linearly with increase in temperature. -0.01 -0.1 -1
0.2
0 0 VDSS max -10 -100
50
100
150
Ambient temperature Ta (C)
Drain-Source voltage VDS
(V)
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SSM5G01TU
IF - VF (SBD)
1000 125 10
IR - VR (SBD)
100
(mA)
(mA)
50
Reverse current IR
100
100
75
1 75
Forward current IF
0.1
50
10
Ta = 25C
0.01
Ta = 25C
0 1 0 0.001 0 Pulse mesurement 5 10 15 20
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Forward voltage
VF
(V)
Reverse voltage VR
(V)
(C/W)
rth - tw (SBD)
1000 3000 1000
CT - VR (SBD)
f = 1 MHz Ta = 25C
Transient thermal impedance
rth
10
CT Total capacitance
(pF)
Single pulse Mounted on FR4 board 2 (25.4 mm 25.4 mm 1.6 t, Cu Pad: 645 mm ) 00.1 0.1 1 10 100 1000 100
100
1 0.001
Pulse width
tw
(s)
10
1 0.01
0.1
1
10
100
Reverse voltage VR
(V)
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RESTRICTIONS ON PRODUCT USE
000707EAA
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
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